Cobalt Disilicide (CoSi₂)
Cobalt Disilicide (CoSi₂)
Cobalt Disilicide (CoSi₂)
Cobalt Disilicide (CoSi₂)

Cobalt Disilicide (CoSi₂)

  • element:Cobalt (Co)
  • purity:High Purity
  • shape:Irregular particles
  • specification:0.8-10 µm (D50)
  • packaging:Customizable

Cobalt disilicide (CoSi₂) is a high-purity intermetallic compound known for its excellent electrical conductivity, thermal stability, and corrosion resistance. It is widely used in semiconductor manufacturing, microelectronics, thermoelectric devices, and advanced coatings. With superior durability and efficiency in extreme conditions, cobalt disilicide plays a crucial role in specialized aerospace applications, energy conversion systems, and scientific research.

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Product Overview
Cobalt disilicide (CoSi₂) is a material with low resistivity and excellent thermal stability. It appears as a gray silicide ceramic powder. With a crystal structure similar to that of silicon, CoSi₂ is widely used in large-scale integrated circuits. Through specialized synthesis methods, CoSi₂ can be formed on silicon substrates to create CoSi₂/Si structures for studying the interface characteristics between metals and semiconductors.

Product Features

  • Low Resistivity: Offers excellent electrical conductivity, making it suitable for high-performance electronic applications.
  • Good Thermal Stability: Maintains stability in high-temperature environments, ideal for harsh operating conditions.
  • Strong Chemical Stability: Does not easily decompose or react under appropriate conditions, resistant to strong acids, alkalis, and other corrosive substances.
  • Silicon Substrate Compatibility: Can form CoSi₂/Si structures for studying interface properties and metal-semiconductor connections.

Applications

  • Large-Scale Integrated Circuits: Used for connections between metals and semiconductors in integrated circuits, offering excellent conductivity and stability.
  • Semiconductor Devices: Serves as a connection material between semiconductor base electrodes and metal wires, widely applied in semiconductor devices.
  • Metal-Silicon Interface Research: Used for studying the interface characteristics of epitaxial metal-silicon layers, providing technical support for advanced electronic materials.

 

Technical ParametersValues
Chinese NameCobalt Silicide
Chemical FormulaCoSi₂
Molecular Weight115.104
CAS Number12017-12-8
EINECS Number234-616-8
Density5.3 g/cm³
Melting Point1277℃
Lattice Constanta = 0.535 nm
Crystal SystemCubic
AppearanceGray silicide ceramic powder
SolubilityInsoluble in water
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