Germanium Telluride Lump

Product Overview
Germanium Telluride (GeTe) is a semiconductor material with exceptional thermoelectric properties. It has a melting point of 724°C and a density of 6.14g/cm³, making it suitable for high-temperature applications. GeTe is a key material in advanced technologies, including phase-change memory, photolithography, and thermoelectric devices.

Features

• High Purity (4N): Ensures superior thermoelectric performance
• High Melting Point (724°C): Suitable for high-temperature environments
• Stable Crystal Structure: Three-dimensional crystal structure with a density of 6.14g/cm³ ensures excellent stability
• Customizable Specifications: Available in various sizes based on customer needs

Applications

• Thermoelectric Materials: Used in thermoelectric power generation and cooling systems to enhance energy conversion efficiency
• Phase-Change Memory: Widely used in the development of high-density memory devices
• Photolithography Masks: Utilized as a semiconductor mask material in photolithography processes
• Semiconductor and Optics: Applied in electronics, optics, infrared optics, and other high-tech industries
• Catalysts: Acts as a catalytic material playing a key role in chemical catalytic processes.