Silicon Carbide Nanowires (CVD Method Ultra)

Product Overview
Silicon carbide (SiC) nanowires (CVD Method Ultra) are synthesized using Chemical Vapor Deposition (CVD), offering exceptional physical and chemical properties. With a Beta crystal structure, these nanowires exhibit superior stability even under extreme conditions, including high temperatures. The gray-green color and nanowire morphology make them ideal for applications in various high-precision electronic and industrial fields.

Key Features

• Excellent Thermal Stability:These SiC nanowires maintain structural stability and performance even in high-temperature environments.
• High Hardness and Wear Resistance:With a high level of hardness, they are ideal for use in advanced grinding materials and precision machining technologies.
• Good Electrical Conductivity:They exhibit excellent conductivity in electronic devices, making them suitable for high-performance electronic applications.
• Corrosion Resistance:The nanowires possess strong chemical corrosion resistance, making them suitable for long-term use in harsh environments.

Applications

• Electronics and Information:Ideal for high-performance electronic components and information storage applications.
• Precision Machining:Used in grinding, cutting, and other high-precision machining tasks.
• Military and Aerospace:Key structural material for use in high-temperature and highly corrosive environments in military and aerospace industries.
• High-Temperature Refractory Materials and Specialty Ceramics:Used in the manufacture of heat-resistant and wear-resistant materials and ceramics.
• Reinforcement Materials:Provides strength and durability, widely used to enhance the properties of composite materials.