new material
Nickel silicide (Ni₂Si) is a high-purity intermetallic compound valued for its excellent electrical conductivity, thermal stability, and oxidation resistance. It is widely used in semiconductor manufacturing, thin-film applications, microelectronics, and high-temperature coatings. Due to its superior durability and efficiency, nickel silicide plays a critical role in precision engineering, scientific research, and specialized electronic component fabrication.
Product Overview
Nickel silicide (Ni₂Si) is a black-gray metal intermetallic compound known for its high melting point and excellent chemical stability. It demonstrates outstanding durability in high-temperature and corrosive environments, making it widely used in microelectronics, thermoelectrics, and catalysis. Nickel silicide's low resistivity and low silicon consumption make it an ideal material, commonly used in various electronic devices and high-temperature alloys.
Product Features
- High Melting Point: With a melting point of 1255°C, it is suitable for high-temperature applications.
- Good Chemical Stability: Exhibits good corrosion resistance to hydrofluoric acid and hydrochloric acid, insoluble in water, and can decompose in aqua regia.
- Low Resistivity: Offers efficient electrical conductivity, making it ideal for high-performance electronic devices.
- Good Oxidation Resistance: Superior to common thermocouple materials like E, J, and K types, making it suitable for high-temperature environments.
Applications
- Batteries: Used as an electrode material in battery components, offering good electrical conductivity and corrosion resistance.
- Catalysts: Used in catalytic reactions, particularly as a substitute for Raney nickel catalysts in unsaturated hydrocarbon hydrogenation.
- Optoelectronic Devices: Serves as an ideal electrical contact material in microelectronic devices, enhancing the performance of optoelectronic components.
- Materials Science: Applied in high-temperature alloys and stainless steel coatings to improve wear resistance and oxidation resistance.
- Complementary Metal-Oxide-Semiconductor (CMOS) Devices: Used as an electrical contact material for source, drain, and gate electrodes, offering excellent scalability.
| Technical Parameters | Values |
| Chemical Formula | Ni₂Si |
| Molecular Weight | 145.472 |
| CAS Number | 12059-14-2 |
| MDL Number | MFCD00151367 |
| EINECS Number | 235-033-1 |
| Density | 7.4 g/cm³ |
| Melting Point | 1255℃ |
| Resistivity Temperature Coefficient (20-100°C) | 689 × 10⁻⁶ / K |
| Thermal Expansion Coefficient (20-100°C) | 17 × 10⁻⁶ / K |
| Thermal Conductivity (100°C) | 27 × W·m⁻¹·K⁻¹ |
