Multi-Walled Carbon Nanotube Vertical Array
Multi-Walled Carbon Nanotube Vertical Array
Multi-Walled Carbon Nanotube Vertical Array
Multi-Walled Carbon Nanotube Vertical Array

Multi-Walled Carbon Nanotube Vertical Array

  • element:Carbon (C)
  • purity:98%
  • shape:Black Block Material
  • specification:Height: 50 – 1000 µm
  • packaging:Customizable

Multi-walled carbon nanotube (MWCNT) vertical array offers optimized alignment, superior electrical conductivity, and enhanced mechanical stability. Designed for advanced applications, it ensures efficient electron transport, extended durability, and high-performance adaptability.

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Product Overview
The multi-walled carbon nanotube vertical array is a nanostructure grown on a single crystal silicon substrate using a specific growth method. This array offers a high specific surface area, excellent electrical conductivity, and chemical stability, making it ideal for applications in thermal management, electrochemistry, and electronic devices. Its vertical array structure provides superior thermal and mechanical properties, especially valuable in high-performance composite materials and nanotechnology.

Key Features

  • High Purity:With a purity of 98%, it ensures stable and consistent material performance.
  • Superior Electrical Conductivity:Offers excellent conductivity, ideal for high-performance electronic devices.
  • Good Thermal Conductivity:The carbon nanotube characteristics give it a significant advantage in thermal management applications.
  • Adjustable Height:The carbon nanotube array height ranges from 50 to 1000 µm, providing flexibility for various applications.

Applications

  • Thermal Management:Used for heat dissipation in electronic devices and as thermal interface materials, improving device stability and performance.
  • Electrochemical Sensors:As an electrode material, it enhances sensor responsiveness and sensitivity.
  • Nanotechnology and Composite Materials:Shows great potential in high-performance composites and nanodevices, broadening its application prospects.
Technical ParameterValue
AppearanceBlack block-like material
Height50 – 1000 µm
Wall Number3~7
Carbon Nanotube Diameter3-10 nm
Purity98%
Density≤0.3 g/cm³
Surface Area~20 m²/g
Conductivity103 S/m
SubstrateSingle crystal silicon
RemarksHeight is random

 

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