Indium Antimonide Lump (InSb)
Indium Antimonide Lump (InSb)
Indium Antimonide Lump (InSb)
Indium Antimonide Lump (InSb)

Indium Antimonide Lump (InSb)

  • element:InSb
  • purity:4N
  • shape:Lump
  • specification:250g
  • packaging:Vacuum packaging, Carton, Wooden box

Indium antimonide (InSb) lump is a high-purity semiconductor compound recognized for its superior electron mobility, thermoelectric efficiency, and infrared detection capabilities. It is widely used in infrared detectors, optoelectronic devices, quantum computing, and advanced electronic applications. Due to its exceptional properties, indium antimonide plays a vital role in precision engineering, aerospace technology, and specialized semiconductor research.

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Product Description
Indium Antimonide (InSb) is a compound semiconductor with a metallic luster, a melting point of 525°C, density of 5.78g/cm³, and a molecular weight of 236.578. It shares the same crystal structure as GaSb, exhibiting excellent semiconductor properties. InSb is widely used in the production of infrared detectors, especially for the fabrication of photoconductive and photovoltaic-type detectors. The material should be stored in a sealed environment with good ventilation to prevent oxidation.

Product Features

  • High purity (4N) ensures superior electronic and semiconductor performance.
  • Compound semiconductor with metallic luster, ideal for high-end applications such as infrared detectors.
  • Excellent physical and chemical stability, suitable for high-precision industrial and research applications.
  • Custom sizes and specifications available upon request.

Applications

  • Infrared Detectors: InSb is an important material for manufacturing infrared detectors with wavelengths in the 3-5μm range.
  • Photoconductive & Photovoltaic Units: Used in the production of photoconductive and photovoltaic-type detection units.
  • Multispectral Focal Plane Detectors: Suitable for focal plane detectors in high-precision infrared detection systems.
  • Magnetoresistive Devices: Used in the fabrication of magnetoresistive materials and devices.

 

ElementMeasured ValueStandard ValueUnitElementMeasured ValueStandard ValueUnitElementMeasured ValueStandard ValueUnit
LiZn<2ppmPb<20ppm
BGaBi<15ppm
FGeY
NaAs<20ppmTh
Mg<2ppmSeEr
AlZrRu
Si<6ppmNbRh
PMoOs
ClPdCd<2ppm
KAg<1ppmIn
CaSn
TiSbMatrixwt%
VBa
CrHf
Mn<1ppmTaC
Fe<2ppmWS
CoPtO
Ni<1ppmAuN
Cu<2ppmHgH

 

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