Gallium Nitride Nanoparticles (GaN)

Product Overview

Gallium Nitride (GaN) is a significant III-V group wide-bandgap semiconductor material, widely used in extreme environments such as high-temperature, high-power, and high-frequency applications. GaN features outstanding properties, including high luminous efficiency, high thermal conductivity, resistance to high temperatures, radiation, acids, and bases, as well as high strength and hardness. As one of the most advanced semiconductor materials, GaN crystals are typically found in hexagonal wurtzite structure (α-phase) and cubic zinc-blende structure (β-phase), with broad applications in optoelectronics, enabling light emission across the infrared to ultraviolet spectrum.

Key Features

• Wide Bandgap: GaN’s wide bandgap allows it to operate stably under high-temperature, high-power, and high-frequency conditions.
• High Electron Mobility: Electrons move quickly through GaN, enabling fast electron transfer, which benefits high-speed electronic applications.
• Good Optical Performance: GaN is capable of emitting light across the ultraviolet to blue light spectrum, making it highly effective for optoelectronic applications.
• High Temperature and Pressure Resistance: GaN maintains excellent performance under high temperature and pressure, making it ideal for extreme environments.

Applications

• Light Emitting Diodes (LEDs): Used in the production of efficient, energy-saving white LEDs, widely applied in home, commercial, and industrial lighting.
• Electronics:

• Power Devices: Used to manufacture high-power, high-frequency transistors, such as Field Effect Transistors (FETs), essential for 5G communication base station power amplifiers, improving signal transmission efficiency and coverage.
• RF Devices: Extensively used in radar, satellite communications, and other RF applications.
  • Laser Devices:
• Laser Diodes: Used in manufacturing ultraviolet and blue light laser diodes, applicable in laser printing, optical storage, and other related fields.